Kugwiritsa ntchito kwa Mosfet, IGBT ndi vacuum triode mu makina otenthetsera opangira mafakitale (ng'anjo)

Zamakono Induction Kutentha Mphamvu Ukadaulo woperekera makamaka umadalira mitundu itatu ya zida zamagetsi zazikulu: MOSFET, IGBT ndi vacuum triode, iliyonse yomwe imakhala ndi gawo losasinthika pazantchito zinazake. MOSFET yakhala chisankho choyamba pankhani yowotchera mwatsatanetsatane chifukwa cha mawonekedwe ake apamwamba kwambiri (100kHz-1MHz), ndipo ndiyoyenera makamaka pazithunzi zamphamvu zotsika komanso zolondola kwambiri monga kusungunuka kwa zodzikongoletsera ndi kuwotcherera kwamagetsi. Pakati pawo, SiC/GaN MOSFET yawonjezera mphamvu kupitilira 90%, koma malire ake (nthawi zambiri

M'munda wapakatikati-mafupipafupi komanso mphamvu yayikulu (1kHz-100kHz), IGBT yawonetsa mwayi wopikisana kwambiri. Monga pachimake chipangizo cha mafakitale kusungunuka ng'anjo ndi zitsulo Kutentha Chithandizo kupanga mizere, magawo IGBT mosavuta kukwaniritsa MW-level mphamvu linanena bungwe. Ukadaulo wake wokhwima komanso wokwera mtengo kwambiri umapangitsa kukhala chisankho chokhazikika pakukonza zinthu monga zitsulo ndi zitsulo zotayidwa. Ndi kukhazikitsidwa kwaukadaulo wa SiC, kuchuluka kwa magwiridwe antchito a m'badwo watsopano wa IGBT wapitilira 50kHz, ndikuphatikizanso kulamulira kwake pamsika mu bandi yapakati-ma frequency.

Mu mawonekedwe apamwamba kwambiri komanso amphamvu kwambiri (1MHz-30MHz), ma vacuum triodes amakhalabe osagwedezeka. Kaya ndizitsulo zapadera zosungunula zitsulo, kupanga plasma, kapena zida zowulutsira, vacuum triode zimatha kupereka mphamvu zokhazikika za MW. Kukaniza kwake kwapadera kwamphamvu kwamagetsi komanso kapangidwe kake kosavuta kagalimoto kumapangitsa kuti ikhale yabwino kusankha zitsulo zogwira ntchito monga titaniyamu ndi zirconium, ngakhale ndizochepa kwambiri (50% -70%) komanso mtengo wokonza.

Chitukuko chamakono chamakono chikuwonetsa mayendedwe omveka bwino a kusinthika: MOSFET ikupitirizabe kulowa m'madera othamanga kwambiri komanso apamwamba kwambiri kudzera muukadaulo wa SiC/GaN; IGBT ikupitiriza kukulitsa gulu lafupipafupi logwira ntchito pogwiritsa ntchito zinthu zatsopano; pomwe ma vacuum machubu amakumana ndi mpikisano wothamanga kuchokera ku zida zolimba pomwe akusunga maubwino awo okwera kwambiri. Kusintha kwaukadaulo uku kukonzanso mawonekedwe a mafakitale amagetsi otenthetsera magetsi.

Pakusankha kwenikweni, mainjiniya amayenera kuganizira mozama zinthu zitatu zazikulu zamafupipafupi, mphamvu ndi chuma: MOSFET imakondedwa kuti ikhale yothamanga kwambiri komanso yotsika mphamvu, IGBT imasankhidwa kuti ikhale yapakati pafupipafupi komanso yamphamvu kwambiri, ndipo ma vacuum triodes amafunikirabe ma frequency apamwamba kwambiri komanso mphamvu zambiri. Ndi kupita patsogolo kwa ukadaulo wa wide-bandgap semiconductor ukadaulo, mulingo wosankhawu ukhoza kusintha, koma m'tsogolomu, mitundu itatu yazida izi ipitiliza kugwira ntchito yofunika kwambiri m'malo awo opindulitsa, komanso kulimbikitsa limodzi kukulitsa ukadaulo wotenthetsera wotenthetsera kupita kunjira yabwino komanso yolondola.